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Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristics (Note1)
BV DSS
I DSS
Drain-Source Breakdown Voltage V GS =0V, I D =10 μ A
Zero Gate Voltage Drain Current V DS =60V, V GS =0V
V DS =60V, V GS =0V, @T C =125 ° C
60
-
78
0.001
7
-
1.0
500
V
μ A
I GSS
Gate-Body Leakage
V GS =±20V, V DS =0V
-
0.2
±100
nA
On Characteristics (Note1)
V GS(th)
R DS(ON)
I D(ON)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
V DS =V GS , I D =250 μ A
V GS =5V, I D =0.05A,
V GS =10V, I D =0.5A, @T J =125°C
V GS =10V, V DS =7.5V
V DS =10V, I D =0.2A
1.0
-
-
0.5
80
1.76
1.6
2.53
1.43
356.5
2.5
7.5
13.5
-
-
V
Ω
A
mS
Dynamic Characteristics
C iss
Input Capacitance
-
37.8
50
pF
C oss
C rss
Output Capacitance
Reverse Transfer Capacitance
V DS =25V, V GS =0V, f=1.0MHz
-
-
12.4
6.5
25
7.0
pF
pF
Switching Characteristics
t D(ON)
t D(OFF)
Turn-On Delay Time
Turn-Off Delay Time
V DD =30V, I D =0.2A, V GEN =10V
R L =150 Ω , R GEN =25 Ω
-
-
5.85
12.5
20
20
ns
Note1 : Short duration test pulse used to minimize self-heating effect.
? 2010 Fairchild Semiconductor Corporation
2N7002V/VA Rev. A1
2
www.fairchildsemi.com
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